Thermal management of VECSEL-GaAs for high-power single-mode emission
Résumé
Information and communication technologies have revolutionized our world and reshaped our industries. Vertical emission in external cavity lasers (VECSEL) combine simultaneously high-power and highly coherent tunable single-frequency laser emission. VECSELs are promising candidates for various applications such as transmitter, sensors.
In our study, we are interested in reducing the thermal impedance of our ½ VECSELs on GaAs substrate, emitting between 800 and 1100nm. Part of the power of the optical pump is converted into a significant heating of the component. This heating reduces the gain of the QWs and induces a shift of the emission wavelength towards longer wavelengths [1]. In the literature, many strategies to improve the heat dissipation for ½ VECSEL are proposed [2][3]. In our case, our approach is to integrate a heat sink as close as possible to the Bragg mirror by dry etching and electrolytic metal growth. As a first step, we studied both the diameter of the aperture and the metal material to be used in order to have a good mechanical stability of the semiconductor structure while ensuring very good heat dissipation
Domaines
Physique [physics]
Origine : Fichiers produits par l'(les) auteur(s)