Concept and technology for full monolithic MOSFET and JBS vertical integration in multi-terminal 4H-SiC power converters - Service Techniques et Équipements Appliqués à la Microélectronique
Journal Articles Solid State Phenomena Year : 2024

Concept and technology for full monolithic MOSFET and JBS vertical integration in multi-terminal 4H-SiC power converters

Abstract

New and original medium power multi-terminal SiC monolithic converter architectures are investigated with vertical switching cells based on SiC JBS diodes and VDMOS transistors. 2D TCAD and mixed-mode Sentaurus™ simulations are performed to optimize switching structures as Buck, Boost, H-bridge high-side row chip common drain-type and low-side row chip common source-type. The proper operation in the turn-on and turn-off of each cell is also studied and validated. To fabricate these new monolithic integrated architectures, two main technological bricks have been developed, for vertical insulation and the integration of a top Ni metal via. To achieve the vertical insulation deep trenches are necessary combining dry plasma and wet KOH electrochemical etching through the thick N + substrate.
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hal-04697223 , version 1 (13-09-2024)

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Ralph Makhoul, Nour Beydoun, Abdelhakim Bourennane, Luong Viet Phung, Frédéric Richardeau, et al.. Concept and technology for full monolithic MOSFET and JBS vertical integration in multi-terminal 4H-SiC power converters. Solid State Phenomena, 2024, 358, pp.23-30. ⟨10.4028/p-pzTJ4o⟩. ⟨hal-04697223⟩
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