Improvement of O 2 plasma etching for diamond power MOSFET fabrication
Résumé
We present the experimental results of oxygen-based ICP-RIE (Inductively Coupled Plasma - Reactive Ion Etching) etching of diamond layers, focusing on the impact of different etching masks, namely metallic (aluminum) and dielectric (SiO2) ones. Additionally, we examine the effects of bias power and ICP plasma power. Our study aims to prevent over-etching at the bottom of sidewalls, achieve high etch rates with smooth surface roughness, and ensure good etch selectivity between the mask and diamond. Furthermore, we investigate how the doping of diamond layers (p-type or n-type) and their crystalline quality influence the etch rate and the resulting surface morphology.
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2024_08_06_article Microelectronics engineering.pdf (802.24 Ko)
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