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H. von Bardeleben, Jean-Louis Cantin, A. Parisini, A. Bosio, R. Fornari. Conduction mechanism and shallow donor properties in silicon-doped ɛ -G a 2 O 3 thin films: An electron paramagnetic resonance study. Physical Review Materials, 2019, 3 (8), pp.084601. ⟨10.1103/PhysRevMaterials.3.084601⟩. ⟨hal-03924960⟩
Dépôts en texte intégral
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Mots clés
Ion implantation
Indium oxide
27Ald p&α
Gold
7630Lh
Silicon Carbide
Nitridation
7550Ee
ADSORPTION DESORPTION HYSTERESIS
X-ray diffraction
Nanoparticles
Thin film
Rutherford backscattering spectrometry RBS
Charge exchange
Pulsed laser deposition
Topological defects
Alloys
15N
Low energy electron diffraction LEED
Acoustic
XPS
Aluminium
EPR
Evaluation
Nickel
Periodic multilayer
AFM
NRP
Ageing
Density functional theory
NRA
Measurement
8140Ef
17Op
13C
Adsorbed layers
3C-SiC
Photoluminescence
Magnetic semiconductors
Acoustic propreties of solid
Auger electron spectroscopy AES
Hysteresis
Oxidation
GaMnAs
Silicon
Magnetic anisotropy
Isotopic Tracing
Epitaxial growth
Silicon carbide
Raman spectroscopy
Defects
6855Jk
Transparent conductive oxide TCO
Annealing
Metal-insulator transition
Topological insulators
Passivation
Adsorption
27Aldp
Ion beam analysis
Aluminum
AC susceptibility
RBS
Oxygen deficiency
17Opp
Kossel diffraction
Nanostructures
Gallium oxide
Adsorption Isotherms
7550Pp
ALD
Magnetization curves
Nuclear resonance profiling NRP
Diffusion
Interface defects
18O
18O resonance
PIXE
Capillary condensation
Sputtering
Growth
Energy loss
XRD
Multilayer
Thin films
Nuclear reaction analysis
HfO2
Pb centers
Channeling
Stable isotopic tracing
Ferromagnetic resonance
Atomic Layer Deposition ALD
Silica
27Alda
Zinc oxide
SiC
17O
2H
Al2O3
Epitaxy