Static RAM modules are widely adopted in high performance systems. Single Event Effects (SEEs) resilient memories are required in many embedded systems applied in automotive and aerospace applications to increase their overall resiliency against SEEs. The current SEE resilient SRAM modules are obtained by applying radiation-hardened by design solutions which leads to elevated area overhead and difficulty to tune the resiliency capability with respect to the particle’s radiation profile. To overcome these limitations, we propose a methodology for the analysis and mitigation of embedded SRAMs generated by the OpenRAM memory compiler. A technology-oriented radiation analysis tool is presented to support the interaction of the charged radiation particles with the SRAM layout and depict the sensitive transistors of the SRAM memory. A selective duplication of the sensitive transistors has been applied to the 6T-SRAM cell designed at the layout level. The designed cell is included in the OpenRAM compiler and used to generate a mitigated 8 Kb SRAM-bank, a DMA interface is also added to the bank in order to evaluate the interface capabilities. We evaluated the SEEs sensitivity by comparative simulation-based radiation analysis observing a reduction more than 6 times with respect to the original 6T-SRAM cell for the SEE sensitivity at high energy heavy ions particles, with negligible degradation of operations margins and power consumption and area overhead of less than ̴ 4%. The performance of the developed OpenRAM module has been also evaluated considering its application on a neural network behavioral model that demonstrate the feasibility of the proposed solution on large scale memory block circuitry.