Fine-Grain Reconfigurable Logic Cells Based on Double-Gate MOSFETs - VLSI-SoC: Design Methodologies for SoC and SiP Access content directly
Conference Papers Year : 2010

Fine-Grain Reconfigurable Logic Cells Based on Double-Gate MOSFETs

Abstract

This work presents a new style of gate-level reconfigurable cells based on the double-gate (DG) MOSFET device. The proposed dynamic- and static-logic cells demonstrate significant gate area reductions compared to conventional CMOS lookup table (LUT) techniques (between 80-95%) while configuration memory requirements are also reduced (up to 60%). Simulation results show that it can be used either in low power reconfigurable applications (up to 90% power reduction is possible) or for speeds comparable to those of CMOS-LUTs.
Fichier principal
Vignette du fichier
03130109.pdf (267.5 Ko) Télécharger le fichier
Origin : Files produced by the author(s)
Loading...

Dates and versions

hal-01054269 , version 1 (05-08-2014)

Licence

Attribution

Identifiers

Cite

Ian O'Connor, Ilham Hassoune, David Navarro. Fine-Grain Reconfigurable Logic Cells Based on Double-Gate MOSFETs. 19th IFIP WG 10.5/IEEE International Conference on Very Large Scale Integration (VLSI-SoC), Oct 2008, Rhodes Island, India. pp.97-113, ⟨10.1007/978-3-642-12267-5_6⟩. ⟨hal-01054269⟩
476 View
74 Download

Altmetric

Share

Gmail Facebook X LinkedIn More